• 國立勤益科技大學電子工程系教授 (2018.02-迄今)
• 國立勤益科技大學進修推廣部副主任 (2017.08-迄今)
• 國立勤益科技大學進修推廣部企劃組組長兼代終身學習組組長 (2016.08-2017.07)
• 國立勤益科技大學電子工程系副教授 (2015.02-2018.01)
• 國立勤益科技大學電資學院特別助理 (2010.08-2016.07)
• 國立勤益科技大學電子工程系專任助理教授 (2010.02-2015.01)
• 國立勤益科技大學電子工程系專案助理教授 (2009.02-2010.01)
• 亞洲大學資訊工程系助理教授 (2007.11-2009.01)

I. 專書

林熊徵,謝韶徽,洪玉城,游信強, “數位邏輯設計原理與應用第七版”,高立圖書有限公司(ISBN 978-
986-157-824-8), January, 2012.

I. SCI Journal Papers

1.  Wang, C J, You, H C*, Lin, K, Ou, J H, Chao, K H, and Ko, F H, “Highly Transparent and Surface-Plasmon-Enhanced Visible-Photodetector Based on Zinc Oxide Thin-Film Transistors with Heterojunction Structure”, Materials, Vol. 12, no.21, 2019.

2. Wu, C C, You, H C *, Lin, Y H, Yang, C J, Hsiao, Y P, Liao, T P, and Yang, W L, "Impact of Electrode Surface Morphology in ZnO-Based Resisttive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique", Materials, Vol. 11, no.2, 2018.

3. Wu, C C, Hsiao, Y P, You, H C *, Lin, G W, Kao, M F, Manga, Y B, and Yang, W L, "Improving the leakage current of polyimide-based resistive memory by tuning the molecular chain stack of the polyimide film",  JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.57, no, 2, 2018.

4. Jian,W Y, You, H C *, and Wu, C Y,  "Resistive switching mechanism of ZnO/ZrO2-stacked resistive random access memory device annealed at 300°C by sol-gel method with forming-free operation",  JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.57, no, 1, 2018.

5. Wang, C J, You, H C, and Ko, F H, "The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer", MICROELECTRONIC ENGINEERING, Vol.177, 2017.

6. Hsin-Chiang You* and Cheng-Jyun Wang, “Low-Temperature, Solution-Processed, Transparent Zinc Oxide-Based Thin-Film Transistors for Sensing Various Solvents”, Materials, Vol. 10, pp. 234(1-6), 2017. 

7. Cheng-Jyun Wang, Hsin-Chiang You* and Fu-Hsiang Ko, “The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer”, Microelectronic Engineering, Vol. 177, pp. 87-92, 2017.

8. Hsin-Chiang You* and Gong-Kai Lin, “Solution-processed ZnO thin films for low voltage and low temperature application in flexible resistive random access memory”, Thin Solid Films, Vol. 616, pp. 728-732, 2016.

9. Hsin-Chiang You* and Yu-Chih Wang, “Effective enhancement of hydrophilicity of solution indium zinc oxide-based thin-film transistors by oxygen plasma treatment of deposition layer surface”, Japanese Journal of Applied Physics, Vol.55, No. 6, pp.066501, 2016.

10. Hsin-Chiang You*, Cheng-Yen Wu and Wen-Luh Yang , “Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors”, International Journal of Electrochemical Science, Vol. 11, Issue 5, pp.3383-3392, 2016.

11. Cheng-Yen Wu, Hsin-Chiang You*, Gong-Kai Lin and Wen-Luh Yang, “Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices”, Japanese Journal of Applied Physics, Vol. 55, No. 4, pp. 044101, 2016.

12. Hsin-Chiang You*, “Transistor Characteristics of Zinc Oxide Active Layers at Various Zinc Acetate Dihydrate Solution Concentrations of Zinc Oxide Thin-film”, accepted for publication in Journal of Applied Research and Technology (ISSN 1665-6423) ,Vol. 13, Issue 4, August 2015. (SCI IF=0.447)

13. Yu-Hsien Lin, Hsin-Chiang You, Jhih-Yong Hsu and Jyun-Han Li, “P-Channel Gd2O3 Trapping Layer for SONOS-Type Flash Memory”, Applied Mathematics & Information Sciences (ISSN: 2325-0399), Vol. 9, No. 1L, pp:141-147, 2015. (SCI IF=1.232)

14. Fun-Tat Chin, Yu-Hsien Lin, Hsin-Chiang You, Wen-Luh Yang, Li-Min Lin, Yu-Ping Hsiao, Chum-Min Ko and Tien-Sheng Chao, “Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application”, Nanoscale Research Letters(ISSN: 1556-276X), Vol. 9, No. 1, pp:592 1-6,2014. (SCI IF=2.481)

15. Hsin-Chiang You*, Yu-Hsien Lin, “Process Research On Cone-Shaped Micro-Nano Structures”, Applied Mathematics & Information Sciences (ISSN: 2325-0399), Vol. 8, No. 5, pp:2605-2611, 2014. (SCI IF=1.232)

16. Yu-Hsien Lin , Yung-Chun Wu  , Hsin-Chiang You, Chun-Hao Chen , Ping-Hua Chen , Yi-He Tsai , Yi-Yun Yang  and K. S. Chang-Liao, “Silicon Heterojunction Solar Cells Using AlOx and Plasma-Immersion Ion Implantation”, Energies(ISSN: 1996-1073) , Vol. 7 ,No. 6, pp. 3653-3663, 2014. (SCI IF=1.602)

17. Hsin-Chiang You*, “Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors”, International Journal of Electrochemical Science (ISSN: 1452-3981), Vol.8, pp.9773-9784, 2013. (SCI IF=1.956)

18. Min-Ching Chu, Jagan Singh Meena, Po-Tsun Liu, Han-Ping D. Shieh, Hsin-Chiang You, Yen-Wei Tu, Feng-Chih Chang and Fu-Hsiang Ko, “Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors”, Applied Physics Express (ISSN: 1882-0778), Vol.6, pp.076501(1-4), 2013. (SCI IF=2.567)

19. Chun-Chi Chen, Hsin-Chiang You, Edward Yi Chang and Fu-Hsiang Ko, “Room temperature self-organized gold nanoparticles materials for embedded electronic devices”, Journal of Materials Science (ISSN: 0022-2461), Vol.24, pp. 376-381, 2013.  (SCI IF=2.305)

20. Hsin-Chiang You* and Yu-Hsien Lin, “Investigation of the Sol-Gel Method on the Flexible ZnO Device”, International Journal of Electrochemical Science (ISSN: 1452-3981), Vol.7, pp.9085-9094, 2012. (SCI IF=1.956)

21. Hsin-Chiang You, Chun-Ming Chang, Tzeng-Feng Liu, Chih-Chia Cheng, Feng-Chih Chang and Fu-Hsiang Ko, “Facile preparation of sol-gel-derived ultrathin and high-dielectric zirconia films for capacitor devices”, Applied Surface Science(ISSN: 0169-4332), Vol.258, pp.10084-10088, 2012. (SCI IF=2.538)

22. Min-Ching Chu, Hsin-Chiang You, Jagan Singh Meena, Shao-Hui Shieh, Chyi-Yau Shao, Feng-Chih Chang and Fu-Hsiang Ko, “Facile Electroless Deposition of Zinc Oxide Ultrathin Film for Zinc Acetate Solution-processed Transistors”, International Journal of Electrochemical Science (ISSN: 1452-3981), Vol.7, pp.5977-5989, 2012. (SCI IF=1.956)

23. Yu-Hsien Lin, Hsin-Chiang You and Chao-Hsin Chien, “Two-bit/four-level Pr2O3 trapping layer for silicon-oxide-nitride-oxide-silicon-type flash memory”, Journal of Vacuum Science & Technology B (ISSN: 1071-1023), Vol.30, pp. 011201 1-4, 2012. (SCI IF=1.358)

24. Chi-Chang Wu, Fu-Hsiang Ko, Wen-Luh Yang, Hsin-Chiang You, Fu-Ken Liu,Chen-Chih Yeh, Pin-Lin Liu, Chiou-Kou Tung and Ching-Hwa Cheng, ” A Robust Data Retention Characteristic of Sol–Gel-Derived Nanocrystal Memory by Hot-Hole Trapping”, IEEE Electron Device Letters (ISSN: 0741-3106 ), Vol. 31, No. 7, pp.746-748, 2010. (SCI IF= 3.023)

25. Min-Ching Chu, Jagan Singh Meena, Chih-Chia Cheng, Hsin-Chiang You, Feng-Chih Chang and Fu-Hsiang Ko, “Plasma-enhanced flexible metal–insulator–metal capacitor using high-k ZrO2 film as gate dielectric with improved reliability”, Microelectronics Reliability (ISSN 0026-2714),Vol.50, pp.1098-1102, 2010. (SCI IF=1.214 )

26. Jagan Singh Meena, Min-Ching Chu, Jitendra N.Tiwari, Hsin-Chiang You, Chung-Hsin Wu and Fu-Hsiang Ko, “Flexible metal-insulator-metal capacitor using plasma enhanced binary hafnium-zirconium-oxide as gate dielectric layer”,  Microelectronics Reliability (ISSN 0026-2714), Vol.50, pp.652-656, 2010. (SCI IF=1.214 )

II. EI Journal Papers

1. Hsin-Chiang You*, Yu-Hsien Lin, Sheng-Jyun Wu, Hsiung-Min Lin and Fu-Hsiang Ko, “The study of X-ray lithography using the DNQ-Novolak type photoresist”, Advances in Information Sciences and Service Sciences (ISSN: 1976-3700), Vol.4, No.18, pp.34-42, 2012. (EI)

2. Hsin-Chiang You, Cheng-Yen Wu, Yu-Hsien Lin and Wen-Luh Yang, “Effects of drift region breakdown voltage power devices”, International Journal of Advancements in Computing Technology (ISSN: 2005-8039), Vol.4, No.18, pp.160-168, 2012. (EI)

3. Yu-Hsien Lin, Hsin-Chiang You, Jin-Shi Hong, Jay-Chi Chou and Jyun-Hong     Shih, “A Novel P-Channel HfO2 Nanocrystal Flash Memory”, Advances in Information Sciences and Service Sciences (ISSN: 1976-3700), Vol.4, No.18, pp.63-70, 2012. (EI)

III.國內期刊

1. Cheng-Yen Wu, Hsin-Chiang You*, Chen-Chung Liu and Wen-Luh Yang, “Analysis and Processing of Power Output Signal of 200V Power Devices”, Information Engineering (IE), Vol. 4, pp. 23-27, 2015.
2. 游信強*,林太皇,房家賢, “車戰”,工業機器人雜誌,Vol. 5, pp. 42-46, 2016.
3. 莊呈彥,呂凱強,游信強*, “NCUT瓦力”,工業機器人雜誌,Vol. 5, pp. 22-26, 2016.
4. 黃淯麟,張丞嘉,游信強*, “NCUT探勘車”,工業機器人雜誌，Vol. 5, pp. 16-21, 2016.
 

  I. SCI Journal Pape I. International Conference Papers

1. H.K. Wu, H.C.You, and C. Y. Wu, "Low-Power Consumption ZrO₂/ZnO/ZrO₂ Tri-Layer Based Resistive Random Access Memory by Sol-Gel Process", 2019 International Electron Devices and Materials Symposium, Taipei, Taiwan, October 24-25, 2019.

2. Cheng-Yen Wu, Hsin-Chiang You, and Yu-Hsien Lin, "Effect of Different Annealing Temperatures on ZnO Flexible Resistive Random Access Memory Bending Tests", International Conference on Advanced Technology Innovation, Sapporo, Japan, Jul 15-18, 2019.

3. Cheng-Yen Wu, and Hsin-Chiang You, "Effect of SOI LDMOS epitaxial layer thickness on breakdown voltage", 2018 International Symposium on Computer, Consumer and Control (IS3C 2018), Taichung, Taiwan , Dec 6-7, 2018

4. Cheng-Jyun Wang, Hsin-Chiang You, and Fu-Hsiang Ko, "Electrical Properties Improvement of ZnO-Based TFT with Nitrogen, and Oxygen Plasma Treatment", 44th International Conference on Micro and Nanoengineering (MNE 2018), Sep 24-27, 2018.

5. Yu-Ru Lin, Yi-Yun Yang, Yu-Hsien Lin*, Hsin-Chiang You and Yung-Chun Wu, “Ultra-Thin Poly-Si Nanowire Junctionless Thin Film Transistors with Nickel Silicide Contact”, The 24th International Workshop on Active-Matrix FlatPanel Displays and Devices, Kyoto, Japan, pp. 159-162, 2017.

6. Cheng-Jyun Wang, Fu-Hsiang Ko*, Hsin-Chiang You and Bo-Wei Du, “Controllable Ink-Jet Printing Technique on Various Channel Width Designs toward Zinc Oxide-Based Thin Film Transistor”, International Symposium on Computer, Consumer and Control 2016, Xi-an, china, pp. 168-171, 2016.

7. Hsin-Chiang You*, Cheng-Yen Wu and Wen-Luh Yang, “Temperature Effects on Resistance of Power Devices”, International Symposium on Computer, Consumer and Control 2016, xi-an, china, pp. 602-605, 2016.

8. Xin-Tian Zhao, Chun-Mei Lu, Shao-Wen Su, Hsin-Chiang You*, Cheng-Yen Wu and Wen-Luh Yang, “Investigating the Main Operating Mechanism of the Zinc Oxide Layer of ZnO RRAM”, International Symposium on Computer, Consumer and Control 2016, Xi-an, china, pp. 598-601, 2016.

9. Hsin-Chiang You*, Yong-Jhen Wu, Gong-Kai Lin, Yu-Chih Wang and Yu-Hsien Lin, “Adjustment of the threshold voltage with gas plasma treatment for a zinc oxide thin film field effect transistor”, Asian Conference on Engineering and Natural Sciences 2016, Fukuoka, Japan, pp. 108-115, 2016.

10. Hsin-Chiang You*, Yu-Chih Wang, Yu-Shiun Huang and Gong-Kai Lin, “To Investigate the Effect of Improving the Flexible Transparent Zinc Oxide Transistors Electrically by Increasing the Buffer Layer Process”, Asian Conference on Engineering and Natural Sciences 2016, Fukuoka, Japan, pp. 731-737, 2016.

11. Yu-Hsien Lin*, Hui-Hsuan Li, Yi-He Tsai and Hsin-Chiang You, “Microwave Annealing for NiSiGe Schottky on SiGe P-Channel Quantum Well Logic Device”, Asian Conference on Engineering and Natural Sciences 2016, Fukuoka, Japan, pp. 729-730, 2016.

12. Cheng-Yen Wu, Yu-Hsien Lin*, Hsin-Chiang You, Jay-Chi Chou and Wen-Luh Yang, “Research of Flexible Transparent Semiconductors”, Asian Conference on Engineering and Natural Sciences 2015, Tokyo, pp. 777-779, 2015.

13. Cheng-Yen Wu, Hsin-Chiang You*, Yu-Hsien Lin and Wen-Luh Yang, “Drift Region by a Hybrid Technology Applied to 800-volt Power Device”, Asian Conference on Engineering and Natural Sciences 2015, Tokyo, pp. 259-269, 2015.

14. Cheng-Yen Wu, Hsin-Chiang You*, Yu-Hsien Lin and Wen-Luh Yang, “Drift Region by a Hybrid Technology Applied to 800-volt Power Device”, accepted for publication in Asian Conference on Engineering and Natural Sciences, Japan, February 3-5, 2015.

15. Cheng-Yen Wu, Yu-Hsien Lin, Hsin-Chiang You, Jay-Chi Chou and Wen-Luh Yang, “Research of Flexible Transparent Semiconductors”, accepted for publication in Asian Conference on Engineering and Natural Sciences, Japan, February 3-5, 2015.

16. Cheng-Jyun Wang, Hsin-Chiang You* and Yu-Hsien Lin, “Facile Oxygen-Plasma Approach for Depositing Silicon / Nitride Oxide on Transparent, Flexible Zinc-Oxide Thin Film Transistors”, IEEE Active-Matrix Flatpanel Displays and Devices (AM-FPD) (ISBN: 978-4-86348-395-8), Japan, pp.109-112, July 2-4, 2014.

17. Hsin-Chiang You*, Yu-Hsien Lin and Sheng-Jyun Wu, “Thermal Annealing for Improving Gold Nano-particles Charge Trapping Layer Nonvolatile Memory Reliability Applications”, IEEE International Symposium on Computer, Consumer and Control 2014(ISBN: 978-1-4799-5277-9), Taiwan, pp. 458 - 461, June 10-12, 2014.

18. Hsin-Chiang You*, Chao-Yuan Huang and Ya-Ling Wu, “Stability and reliability for Zinc-Oxide Thin-Film Transistors by O2 plasma treatment”, IEEE International Symposium on Computer, Consumer and Control 2014(ISBN: 978-1-4799-5277-9), Taiwan, pp. 462 - 465, June 10-12, 2014.

19. Yu-Hsein Lin, Hsin-Chiang You and Wan-Ting Tsai, Jyun-Han Li, Jin-Shi Hong, Hung-Wei Chen, “HfO2 Trap Layer Nonvolatile Flash Memory on SiGe Channel”, IEEE International Symposium on Computer, Consumer and Control 2014(ISBN: 978-1-4799-5277-9), Taiwan, pp. 466 - 469, June 10-12, 2014.

20. Yu-Hsein Lin, Hsin-Chiang You, Yi-He Tsai, Yung-Chun Wu, Ping-Hua Chen and Bo-Yu Lai, “Ultra-Low Temperature Flexible Dye-Sensitized Solar Cell”, IEEE International Symposium on Computer, Consumer and Control 2014(ISBN: 978-1-4799-5277-9), Taiwan, pp. 470 - 473, June 10-12, 2014.

21. Hsin-Chiang You*, Yen-Wei Tu, Yu-Hsien Lin and Shao-Hui Shieh, “The Transistor Characteristics of Zinc Oxide Active Layer with Different Thickness of Zinc Oxide Thin-film”, IEEE International Symposium on Computer, Consumer and Control 2012 (ISBN: 978-0-7695-4655-1),Taiwan, pp.858-861, June 4-6, 2012.

22. Yu-Hsien Lin, Hsin-Chiang You, Jay-Chi Chou, Tung-Huan Chou and Tien-Sheng Chao, “NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films”, IEEE International Symposium on Computer, Consumer and Control 2012 (ISBN: 978-0-7695-4655-1),Taiwan, pp.825-828, June 4-6, 2012.

23. Hsin-Chiang You, Chiou-Kou Tung, Shao-Hui Shieh, Shiang-Jun Zhang, Fu-Hsiang Ko and Hung-Chaun Su, “The Research on the Fabrication of Abnormal Submicro Structures”, International Conference on High-Speed Circuits Design (ISBN: 978-957-21-7823-2), Taiwan, pp.205-208, October 28-29, 2010.

24. Chi-Chang Wu, Hsin-Chiang You, Fu-Hsiang Ko and Wen-Luh Yang, “Novel Sol-gel Derived SONOS-type Nanocrystal Memory” , IEEE International NanoElectronics Conference (ISBN: 978-1-4244-3543-2), Hong Kong, pp.1228-1229, January 3-8 2010.

II. National Conference Papers

1. Hsuan Te, Chang, and Hsin Chiang You, "E-Commerce Platform marketing brand APP development by Google MIT App Inventor", The 14th Intelligent Living Technology Conference (ILT2019), Taichung, Taiwan, June 14, 2019.

2. 吳承炎，曾淑娟, 游信強，"Computer Aided Simulation Analysis of 700V High Power Component Crash Voltage", 第十五屆台灣電力電子研討會暨展覽會, 台中， 台灣, Sep 14-15, 2018.

3. 吳承炎, 游信強, "物聯網遠程控制3D列印小型六足機器人", 2018 Conference on Applications of Innovation and Invention, 台中, 台灣, Nove 23, 2018.

4. Yen-Shuo Chen and Hsin-Chiang You*, “Investigating Mechanism of Zinc Oxide Thin Film Transistor Using Floating Gate on Silicon Nitride”, The 12th Intelligent Living Technology Conference (ILT2017), Taichung, Taiwan, pp. 272-275, 2017.

5. Yuan-Sheng Wu and Hsin-Chiang You*, “High performance, Low Temperature Solution Process For Zinc Oxide Thin Film Transistor”, The 12th Intelligent Living Technology Conference (ILT2017), Taichung, Taiwan, pp. 259-262, 2017.

6. Shu-Chuan Tseng, Cheng-Yen Wu* and Hsin-Chiang You, “Low-temperature and Sol-gel Made Zinc Oxide for Thin Film Transistors”, Proceedings of the International Workshop on Modern Science and Technology 2016, Taichung, Taiwan, pp. 305-312, 2016.

7. Hsin-Chiang You*, Cheng-Yen Wu and Wen-Luh Yang, “Bulk-Silicon LDMOS Structure Applied to 800-Volt Power Device”, The 11th Intelligent Living Technology Conference (ILT2016), Taichung, Taiwan, pp. 297-300, 2016.

8. Yi-Lun Chen , Chun-Chi Chen and Hsin-Chiang You*, “Simulation of Vgroove Junctionless transistor (LG=7 nm, ThicknessCH=10 nm) with different doped concentration”, The 10th Intelligent Living Technology Conference (ILT2015), Taichung,Taiwan, pp. 604-608, 2015.

9. Yu-Shiun Huang and Hsin-Chiang You*, “Influence of Channel Layer Thickness on the Electrical Performances of Sol-gel method Zinc Oxide Thin- Film Transistors”, The 10th Intelligent Living Technology Conference (ILT2015), Taichung, Taiwan, pp. 609-612, 2015.

10. Jin-yu Chen, Yu-Cherng Hung and Hsin-Chiang You, “Study on switching characteristics of Cu/ZnO/Al RRAM devices with the formation/rupture of Cu filaments”, The 9rd Intelligent Living Technology Conference (ISBN: 978-957-21-9400-3), Taichung, Taiwan, pp. 1218-1220, June 6, 2014.

11. 游信強,柯伯諭,施庚廷,吳承炎, “The impact of Halo Implant impacting on Power MOS devices”, The 9rd Intelligent Living Technology Conference (ISBN: 978-957-21-9400-3), Taichung, Taiwan, pp. 384-390, June 6, 2014.

12. 游信強,陳勁宇,洪玉城, “Study on metal electrode and oxide thickness for resistance random access memory (RRAM) devices by ZnO thin film”, 2013 Conference on Innovative Electronics Design and Applications (ISBN: 978-957-21-9205-4), Taichung, Taiwan, pp. 195-199, December 13, 2013.

13. 游信強, 崔振豪, 柯伯諭 , 吳承炎, “22nm MOSFETs on the UTBSOI structure”, The 8th Intelligent Living Technology Conference(ISBN: 978-957-21-8962-7), Taichung, Taiwan, pp. 1513-1518, June 7, 2013.

14. 謝於恩, 游信強, 吳承炎, “Design of 24V power MOS devices”, The 8th Intelligent Living Technology Conference(ISBN: 978-957-21-8962-7), Taichung, Taiwan, pp. 1475-1480, June 7, 2013.

15. 江武憲,游信強,吳承炎, “Analysis of Breakdown Voltages in Power MOSFET”, 2012 Conference on Innovative Electronics Design and Applications (ISBN: 978-957-21-8749-4), Nantou, Taiwan, pp. 68-72, December 21, 2012.

16. Wu-Hsien Chiang, Hsin-Chiang You, Chiou-Kou Tung, Tuo-Yu Wang, Ying-Hao Chen, Ling-Jyun Liao and Cheng-Yen Wu, “40V Power MOS breakdown voltage with electric potential effect”,2012 The 6-th Cross-Strait Technology, Humanity Education and Academy-Industry Cooperation Conference, (ISBN: 978-957-21-8752-4), Taichung, Taiwan, pp.I-01, November 23, 2012.

17. 廖國翔,游信強,吳承炎,“Study of STI power MOS device characteristics” , The 7rd  Intelligent Living Technology Conference (ISBN: 978-957-21-8506-3), Taichung, Taiwan, pp. 809-816, June 1, 2012.

18. 游信強,吳承炎,謝韶徽,邱俊博,張元豪,林育賢, “功率MOS元件的漂移區的參數調變”, The 1st Conference on Applications of Innovation & Invention (ISBN: 978-957-21-8323-6), Taichung, Taiwan, pp. 288-290, November 24, 2011.

19. 游信強,吳承炎,董秋溝,呂雅琳,王誠駿,林育賢, “UTBSOI鎳奈米點記憶體元件”, The 1st Conference on Applications of Innovation & Invention (ISBN: 978-957-21-8323-6), Taichung, Taiwan, pp. 291-292, November 24, 2011.

20. 游信強,吳承炎,張元豪,邱俊博,“Study of high-voltage devices LDMOS 300V”, The 6rd  Intelligent Living Technology Conference (ISBN: 978-957-21-8031-0), Taichung, Taiwan, pp. 833-835, June 3, 2011.

21. 游信強,吳承炎,盧如意,許家榕,“P-TOP depth of the impact of the breakdown voltage”, The 6rd  Intelligent Living Technology Conference (ISBN: 978-957-21-8031-0), Taichung, Taiwan, pp. 836-837, June 3, 2011.

22. Hsin-Chiang You* and Shiang-Jun Zhang, “Al-Doped ZnO Thin Film Transistors by Thermal Evaporation”, The 5rd Intelligent Living Technology Conference (ISBN 978-957-21-7647-4), Taichung, Taiwan, pp. 681-683, June 4, 2010.

23. 謝韶徽,林俊宏,洪玉城,董秋溝,游信強,“High-Gain High-CMRR Pre-Amplifier for Biomedical Systems”, The 5rd Intelligent Living Technology Conference (ISBN 978-957-21-7647-4), Taichung, Taiwan, pp. 801-804, June 4, 2010.

24. Hsin-Chiang You* , Chiou-Kou Tung and Shiang-Jun Zhang, “Sol-Gel Derived SONOS-Type Memory”, 2010 Symposium on Nano Device Technology (ISBN: 978-957-29435-8-8), Taiwan, pp.44, May 4-5, 2010.

1. 科技部計畫
計劃名稱: 軟性嵌入式生物胺氣體分子檢測之奈米粒子共軛薄膜電晶體系統
計劃編號: MOST 106-2221-E-167-029
主 持 人: 游信強
計劃金額：621,000元
執行期間：106/08/01-107/07/31

2. 科技部計畫
計劃名稱: 超低溫3D壓電噴墨製程技術印刷免光罩軟性1T-1M 陣列電阻式記憶體元件之研究
計劃編號: MOST 105-2221-E-167-029
主 持 人: 游信強
計劃金額：713,000元
執行期間：105/08/01-106/07/31

3. 科技部計畫
計劃名稱: 免標示即時超靈敏可撓式氧化鋅薄膜電晶體生物感測元件
計劃編號: MOST 104-2221-E-167-012
主 持 人: 游信強
計劃金額：741,000元
執行期間：104/08/01-105/07/31

4. 科技部計畫
計劃名稱: 3D 軟性基板1T2R 結構記憶體元件之開發
計劃編號: MOST 103-2221-E-167-035
主 持 人: 游信強
計劃金額：680,000元
執行期間：103/08/01-104/07/31

5. 國科會計畫
計劃名稱: 3D 軟性基板1T2R 結構記憶體元件之開發
計劃編號: NSC 103-2221-E-167 -035
主 持 人: 游信強
計劃金額：68萬元
執行期間：103/08/01-104/07/31

6. 國科會計畫
計劃名稱: 軟性奈米記憶體元件之開發
計劃編號: NSC 102-2221-E-167 -033
主 持 人: 游信強
計劃金額：58.8萬元
執行期間：102/08/01-103/07/31

7. 國科會計畫
計劃名稱: 低溫液態製程製備軟性記憶體元件之研究
計劃編號: NSC 100 - 2221 - E - 167 - 002
主 持 人: 游信強
計劃金額：39.4 萬元
執行期間：100/08/01-101/07/31

8. 國科會計畫
計劃名稱: 應用溶膠凝膠形成奈米微晶粒技術於奈米記憶體元件之研究
計劃編號: NSC 98-2221-E-167 -029
主 持 人: 游信強
計劃金額：53.4 萬元
執行期間：98/08/01-99/07/31

9. 產學合作計畫
公司名稱：孕龍科技股份有限公司
計劃名稱：電腦周邊設備應用與推廣
計劃編號:  NCUT-CY13TCL-006
主 持 人: 陳文淵
共同主持人: 游信強
計劃金額：16.8 萬元
執行期間：102/08/01-103/07/31

10. 產學合作計畫
公司名稱：今騰工業股份有限公司
計劃名稱：軟性電子元件之開發
計劃編號:  NCUT-CY11TCL-012
主持人：游信強
計劃金額：10 萬元
執行期間：100/12/01-101/11/30

11. 產學合作計畫
公司名稱：天下數位科技股份有限公司
計劃名稱：3D遊戲創意設計開發
計劃編號:  NCUT-CY11TCL-011
主 持 人: 陳文淵
共同主持人: 游信強
計劃金額：31.5 萬元
執行期間：100/11/01-101/10/31

12. 產學合作計畫
公司名稱：鈊象電子股份有限公司
計劃名稱：3D遊戲創意設計與推廣
計劃編號:  NCUT-CY11TCL-003
主 持 人: 陳文淵
共同主持人: 游信強
計劃金額：30 萬元
執行期間：100/08/01-101/07/31

13. 產學合作計畫
公司名稱：雅得電池股份有限公司
計劃名稱：軟性太陽能電池之開發
計劃編號:  NCUT-CY10TCL-009
主持人：游信強
計劃金額：15 萬元
執行期間：99/10/01-100/09/30

14. 產學合作計畫
公司名稱：今騰工業股份有限公司
計劃名稱：使用電子顯微鏡之不鏽鋼材質特性分析
計劃編號:  NCUT-CY10TCL-007
主持人：游信強
計劃金額：10 萬元
執行期間：99/09/01-100/08/31

15. 產學合作計畫
公司名稱：凌陽股份有限公司
計劃名稱：凌陽晶片創意應用設計與推廣
計劃編號:  NCUT-CY10TCL-006
主 持 人: 陳文淵
共同主持人: 游信強
計劃金額：200 萬元
執行期間：99/08/01-100/07/31

16. 產學合作計畫
公司名稱：飛絡力股份有限公司
計劃名稱：電子遊戲機創意設計比賽與推廣
計劃編號:  NCUT-CY10TCL-005
主 持 人: 陳文淵
共同主持人: 游信強
計劃金額：30 萬元
執行期間：99/08/01-100/07/31

17. 產學合作計畫
公司名稱：金寶盛五金股份有限公司
計劃名稱：使用電子顯微鏡分析鋼鐵材料對加工的影響
計劃編號:  NCUT-CY09TCL-014
主持人：游信強
計劃金額：11 萬元
執行期間：98/10/01-99/09/30

18. 產學合作計畫
公司名稱：盛源製網股份有限公司
計劃名稱：研究金屬網應用於靜電防護屏蔽效應
計劃編號:  NCUT-CY09TCL-013
主持人：游信強
計劃金額：11 萬元
執行期間：98/10/01-99/09/30

19. 產學合作計畫
公司名稱：今騰工業股份有限公司
計劃名稱：使用電子顯微鏡之不鏽鋼材質分析與開發
計劃編號:  NCUT-CY09TCL-003
主持人：游信強
計劃金額：10 萬元
執行期間：98/07/01-99/06/30

20. 國立勤益科技大學校內研究計畫
計劃名稱：高效能新穎軟性快閃記憶體元件之開發
主 持 人: 游信強
計劃金額：8.5 萬元
執行期間：100/01/01-100/12/31

21. 國立勤益科技大學教師專業教學社群計畫
計劃名稱：VLSI技術教師專業社群
主 持 人: 游信強
計劃金額：4 萬元
執行期間：101/03/01-101/12/31

22. 國立勤益科技大學教師專業教學社群計畫
計劃名稱：積體電路技術教師專業社群
主 持 人: 游信強
計劃金額：2.5 萬元
執行期間：99/02/22-99/06/28

23. 國立勤益科技大學教師專業教學社群計畫
計劃名稱：積體電路技術教師專業社群
主 持 人: 游信強
計劃金額：2.72 萬元
執行期間：98/10/01-98/12/31

     

I. 發明專利

1. 國立勤益科技大學,游信強, 陳啟鈞, 吳源盛, “重金屬感測器Metal ions sensor”, I627404, 2018/6/21-2037/2/23.

2. 國立勤益科技大學,游信強, “微機電發電元件及其製造方法Micro-generator and producing method thereof”, I610475, 2018/1/1-2037/3/6.

3. 國立勤益科技大學,游信強, 吳承炎, "電動車聲音產生器 SOUND GENERATOR FOR ELECTRIC VEHICLE" ，I636905, 2018/10/1-2037/12/12.

4.國立勤益科技大學，游信強，吳承炎, "車輛組件、製造方法及其成品 DEVICE FOR WHEEL PART, PRODUCING METHOD AND WHEEL PRODUCT THEREOF ", I637865, 2018/10/11-2037/11/19.

5.國立勤益科技大學，游信強, 吳承炎, "一種陣列電阻式記憶體元件之製造方法 A PRODUCING METHOD OF AN ARRAY RESISTIVE MEMORY DEVICE ELEMENT", I661546, 2019/6/1-2038/12/4.


 

I. 個人獲獎

1. 榮獲105年度「推動科技研究發展獎勵-學術期刊論文獎」、「推動科技研究發展獎勵-競賽獎」(106.08)
2. 榮獲105學年度輔導服務傑出教師獎 (106.01.17)
3. 榮獲104年度「推動科技研究發展獎勵-學術期刊論文獎」、「推動科技研究發展獎勵-競賽獎」(105.08)
4. 榮獲103年度科技部獎勵特殊優秀人才

II.師生獲獎

1. 2019全國開放式硬體與物聯網應用創意競賽佳作，作品名稱：「左右逢源-IOT遠端監控仿真機器手」(2019.05.16)
2. 2019第四屆全國青年創意應用競賽佳作，作品名稱：「一手掌握-IOT遠端控制工業機器手臂」(2019.04.19)
3. 2019年(第14屆)工業機器人競賽-創意競賽組第一名，作品名稱：「物聯網遠程控制3D列印六足螞蟻機器人」 (2019.03.16)
4. 2018全國青年創意應用競賽佳作，作品名稱：「飛力」(2018.03.28)
5. 2016年工業機器人競賽-車戰-榮獲第三名 (2016.01.10)
6. 最佳論文：(1)謝韶徽、林俊宏、洪玉城、董秋溝、游信強,“High-Gain High-CMRR Pre-Amplifier for Biomedical Systems”, The 5rd Intelligent Living Technology Conference (ISBN 978-957-21-7647-4), Taichung, Taiwan, pp. 801-804, June 4, 2010.
7. 最佳論文：(2) Hsin-Chiang You , Chiou-Kou Tung, Shiang-Jun Zhang, “Sol-Gel Derived SONOS-Type Memory”, 2010 Symposium on Nano Device Technology (ISBN: 978-957-29435-8-8), Taiwan, pp.44, May 4-5, 2010.